On the need for a tunneling pre-factor in Fowler–Nordheim tunneling theory
نویسنده
چکیده
This paper argues that a tunneling prefactor should appear in expressions for the tunneling probability D relevant to cold field electron emission CFE and in Fowler–Nordheim FN type equations. Except in the case of the “ideally smooth” parabolic barrier, a prefactor is always present for barriers where D can be found by exact solution of the Schrödinger equation. A review of the Jeffreys–Wentzel–Kramers–Brillouin JWKB approach to solving the Schrödinger equation shows that tunneling barriers should be classified according to whether they are weak or strong and ideally smooth or not: there are four different JWKB-type formulas, depending on the nature of the barrier. CFE tunneling barriers are not ideally smooth but since the 1950s have usually been analyzed using the JWKB formulas for ideally smooth barriers. These analyses, and the standard Murphy–Good FN-type equation, seem mathematically and physically incomplete. The FN-type equations currently used to describe CFE should be revised to explicitly include a tunneling prefactor. Some implications are explored. © 2008 American Institute of Physics. DOI: 10.1063/1.2937077
منابع مشابه
Self-powered Time-keeping and Synchronization using Fowler-Nordheim Tunneling based Floating-gate Integrators
Self-powered timers provide a mechanism to achieve temporal synchronization between two passive devices (for e.g. radio-frequency tags, credit/access cards, thumb drives) without the need for any external powering or clocks. As a result the timers could be used to implement dynamic SecureID type authentication involving random keys and tokens that need to be periodically generated and synchroni...
متن کاملOxide Roughness Effect on Tunneling Current of MOS Diodes
Two-dimensional (2-D) device simulation is used to investigate the tunneling current of metal ultra-thin-oxide silicon tunneling diodes with different oxide roughness. With the conformal nature of ultrathin oxide, the tunneling current density is simulated in both direct tunneling and Fowler–Nordheim (FN) tunneling regimes with different oxide roughness. The results show that oxide roughness dr...
متن کاملThe Relaxation Phenomena of Positive Charges in Thin Gate Oxide During Fowler–Nordheim Tunneling Stress
In this study, new relaxation phenomena of positive charges in gate oxide with Fowler–Nordheim (FN) constant current injections have been investigated and characterized. It was found that the magnitudes of applied gate voltage shifts ( VFN) during FN injections, after positive charges relaxed or discharged, have a logarithmic dependence with the relaxation time for both injection polarities. Th...
متن کاملFowler - Nordheim emission modified by laser pulses in the adiabatic regime
We investigate enhanced field emission due to a continuous or pulsed oscillating field added to a constant electric field E at the emitter surface. When the frequency of oscillation, field strength, and property of the emitter material satisfy the Keldysh condition γ < 1/2 one can use the adiabatic approximation for treating the oscillating field, i.e. consider the tunneling through the instant...
متن کاملEvidence for electrical spin tunnel injection into silicon
Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transp...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008